1999-11-22 page 1 BSP613P preliminary data sipmos small-signal-transistor features p-channel enhancement mode avalanche rated d v /d t rated product summary drain source voltage v v ds -60 drain-source on-state resistance r ds(on) 0.13 w continuous drain current a i d -2.9 vps05163 1 2 3 4 type package ordering code BSP613P sot-223 q67040-s4190 pin 1 pin 2/4 pin 3 g d s maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol unit value -2.9 -2.3 a continuous drain current t a = 25 c t a = 70 c i d pulsed drain current t a = 25 c i d puls -11.6 avalanche energy, single pulse i d = -2.9 a , v dd = -25 v, r gs = 25 w 150 mj e as avalanche energy, periodic limited by t jmax e ar 0.18 d v /d t 6 reverse diode d v /d t i s = -2.9 a, v ds = -48 v, d i /d t = 200 a/s, t jmax = 150 c kv/s gate source voltage v gs 20 v power dissipation t a = 25 c p tot 1.8 w operating and storage temperature t j , t stg -55...+150 c iec climatic category; din iec 68-1 55/150/56
1999-11-22 page 2 BSP613P preliminary data thermal characteristics parameter symbol unit values min. max. typ. characteristics thermal resistance, junction - soldering point (pin 4) 19 k/w - r thjs - smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 100 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -250 a v (br)dss -60 - v - gate threshold voltage, v gs = v ds i d = -1 ma -2.1 -3 -4 v gs(th) zero gate voltage drain current v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 125 c a -1 -100 i dss -0.1 -10 - - i gss - -10 -100 gate-source leakage current v gs = -20 v, v ds = 0 v na drain-source on-state resistance v gs = -10 v, i d = -2.9 a r ds(on) - 0.11 0.13 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
1999-11-22 page 3 BSP613P preliminary data electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = -2.9 a 2.3 g fs s - 4.6 input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss 700 875 pf - c oss - 295 235 output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz 120 95 c rss - turn-on delay time v dd = -30 v, v gs = -10 v, i d = -2.9 a, r g = 2.7 w - 17 ns 11.5 t d(on) rise time v dd = -30 v, v gs = -10 v, i d = -2.9 a, r g = 2.7 w t r - 18 12 35 52 t d(off) turn-off delay time v dd = -30 v, v gs = -10 v, i d = -2.9 a, r g = 2.7 w - fall time v dd = -30 v, v gs = -10 v, i d = -2.9 a, r g = 2.7 w t f - 13 19
1999-11-22 page 4 BSP613P preliminary data electrical characteristics, at t j = 25 c, unless otherwise specified unit values symbol parameter min. typ. max. dynamic characteristics gate to source charge v dd = -48 v, i d = -2.9 a - q gs nc 2.6 1.7 gate to drain charge v dd = -48 v, i d = -2.9 a q gd 9.5 14.3 - 33 - q g gate charge total v dd = -48 v, i d = -2.9 a, v gs = 0 to -10 v 22 gate plateau voltage v dd = -48 v , i d = -2.9 a v (plateau) - -3.7 - v parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 c i s - - -2.9 a inverse diode direct current,pulsed t a = 25 c i sm - - -11.6 inverse diode forward voltage v gs = 0 v, i f = -2.9 a v sd - -0.8 -1.1 v reverse recovery time v r = -30 v, i f = i s , d i f /d t = 100 a/s t rr - 46.6 79 ns reverse recovery charge v r = -30 v, i f = l s , d i f /d t = 100 a/s q rr - 75 112 nc
1999-11-22 page 5 BSP613P preliminary data drain current i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 a -3.2 BSP613P i d power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 1.9 BSP613P p tot transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w BSP613P z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 2 -10 a BSP613P i d r d s ( on ) = v d s / i d dc 10 ms 1 ms t p = 260.0 s
1999-11-22 page 6 BSP613P preliminary data typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0.0 -1.0 -2.0 -3.0 -4.0 a -6.0 i d 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 w 0.42 BSP613P r ds(on) a v gs [v] = a -3.5 b b -3.7 c c -4.0 d d -4.2 e e -4.5 f f -4.7 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -10.0 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v ds 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 a -7.0 BSP613P i d v gs [v] a a -3.5 b b -3.7 c c -4.0 d d -4.2 e e -4.5 f f -4.7 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k p tot = 1.80 w k -10.0 typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 -1 -2 -3 -4 -5 v -7 v gs 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 s 7.0 g fs
1999-11-22 page 7 BSP613P preliminary data drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -2.9 a, v gs = -10 v -60 -20 20 60 100 c 180 t j 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 w 0.34 BSP613P r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -1 ma -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 2% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 98% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -1 -10 0 -10 1 -10 2 -10 a BSP613P i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
1999-11-22 page 8 BSP613P preliminary data avalanche energy e as = f ( t j ) para.: i d = -2.9 a , v dd = -25 v, r gs = 25 w 25 45 65 85 105 125 oc 165 t j 0 20 40 60 80 100 120 mj 160 e as typ. gate charge v gs = f ( q gate ) parameter: i d = -2.9 a pulsed 0 4 8 12 16 20 24 28 nc 34 q gate 0 -2 -4 -6 -8 -10 -12 v -16 BSP613P v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 BSP613P v (br)dss
1999-11-22 page 9 BSP613P preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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